College of Humanities and Sciences, Nihon University, Sakurajosui, Tokyo 156, Japan
(Received May 8, 1991; Accepted November 1, 1991)
Keywords: Transient Current, Percolation Cluster, Fractal, Monte Carlo Simulation, Amorphous Semiconductor
Abstract. The current of particles induced by the random walk on percolation clusters, which were formed according to the site percolation process of a simple cubic lattice, was simulated by the Monte Carlo technique. The transient current obtained could be fitted by a pair of hyperbolic decay functions, which was used to fit the transient current in time of flight experiment of amorphous semiconductors.